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IXGN50N60BD2 IGBT Transistor

The IXGN50N60BD2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN50N60BD2 transistor as follows.

Circuit diagram symbol of the IXGN50N60BD2 transistor

IXGN50N60BD2 Transistor Specification

Transistor Code IXGN50N60BD2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 150

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