IXGN200N60B3 IGBT Transistor

The IXGN200N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN200N60B3 transistor as follows.

IXGN200N60B3 Transistor Specification

Transistor Code		IXGN200N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227B
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	300A
Rise Time		183

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