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IXGN200N60B3 IGBT Transistor

The IXGN200N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN200N60B3 transistor as follows.

Circuit diagram symbol of the IXGN200N60B3 transistor

IXGN200N60B3 Transistor Specification

Transistor Code IXGN200N60B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 300A
Rise Time 183

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