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IXGN200N60A2 IGBT Transistor

The IXGN200N60A2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN200N60A2 transistor as follows.

Circuit diagram symbol of the IXGN200N60A2 transistor

IXGN200N60A2 Transistor Specification

Transistor Code IXGN200N60A2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 200A
Rise Time 250

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