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IXGN200N60A IGBT Transistor

The IXGN200N60A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN200N60A transistor as follows.

Circuit diagram symbol of the IXGN200N60A transistor

IXGN200N60A Transistor Specification

Transistor Code IXGN200N60A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 200

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