IXGN200N60A IGBT Transistor

The IXGN200N60A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN200N60A transistor as follows.

IXGN200N60A Transistor Specification

Transistor Code		IXGN200N60A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		200

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