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IXGN120N60A3D1 IGBT Transistor

The IXGN120N60A3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN120N60A3D1 transistor as follows.

Circuit diagram symbol of the IXGN120N60A3D1 transistor

IXGN120N60A3D1 Transistor Specification

Transistor Code IXGN120N60A3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 200A
Rise Time 260

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