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IXGN100N170 IGBT Transistor

The IXGN100N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN100N170 transistor as follows.

Circuit diagram symbol of the IXGN100N170 transistor

IXGN100N170 Transistor Specification

Transistor Code IXGN100N170
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 160A

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