IXGM40N60 IGBT Transistor

The IXGM40N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGM40N60 transistor as follows.

IXGM40N60 Transistor Specification

Transistor Code		IXGM40N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO204AE
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		300
Rise Time		200

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