IXGM25N100 IGBT Transistor

The IXGM25N100 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGM25N100 transistor as follows.

IXGM25N100 Transistor Specification

Transistor Code		IXGM25N100
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO204
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		3.5

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