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IXGL200N60B3 IGBT Transistor

The IXGL200N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGL200N60B3 transistor as follows.

Circuit diagram symbol of the IXGL200N60B3 transistor

IXGL200N60B3 Transistor Specification

Transistor Code IXGL200N60B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS264
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC A
Rise Time 750

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