IXGL200N60B3 IGBT Transistor

The IXGL200N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGL200N60B3 transistor as follows.

IXGL200N60B3 Transistor Specification

Transistor Code		IXGL200N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS264
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	A
Rise Time		750

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