IXGK64N60B3D1 IGBT Transistor

The IXGK64N60B3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGK64N60B3D1 transistor as follows.

IXGK64N60B3D1 Transistor Specification

Transistor Code		IXGK64N60B3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	400A
Rise Time		88

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