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IXGK55N120A3H1 IGBT Transistor

The IXGK55N120A3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGK55N120A3H1 transistor as follows.

Circuit diagram symbol of the IXGK55N120A3H1 transistor

IXGK55N120A3H1 Transistor Specification

Transistor Code IXGK55N120A3H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.3V
Collector Current (Maximum) IC 125A
Rise Time 282

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