IXGK35N120CD1 IGBT Transistor

The IXGK35N120CD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGK35N120CD1 transistor as follows.

IXGK35N120CD1 Transistor Specification

Transistor Code		IXGK35N120CD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	70A
Rise Time		160

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