IXGK120N60B IGBT Transistor

The IXGK120N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGK120N60B transistor as follows.

IXGK120N60B Transistor Specification

Transistor Code		IXGK120N60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	560W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector Current (Maximum)	IC	76A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		11000pF
Rise Time		160

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