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IXGJ50N60C4D1 IGBT Transistor

The IXGJ50N60C4D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGJ50N60C4D1 transistor as follows.

Circuit diagram symbol of the IXGJ50N60C4D1 transistor

IXGJ50N60C4D1 Transistor Specification

Transistor Code IXGJ50N60C4D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISO_TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 38A
Rise Time 63

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