IXGJ50N60B IGBT Transistor

The IXGJ50N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGJ50N60B transistor as follows.

IXGJ50N60B Transistor Specification

Transistor Code		IXGJ50N60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268(I3-PAK)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	75A
Rise Time		120

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