IXGJ40N60C2D1 IGBT Transistor

The IXGJ40N60C2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGJ40N60C2D1 transistor as follows.

IXGJ40N60C2D1 Transistor Specification

Transistor Code		IXGJ40N60C2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268(I3-PAK)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	75A
Rise Time		32

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