IXGH85N30C3 IGBT Transistor

The IXGH85N30C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH85N30C3 transistor as follows.

IXGH85N30C3 Transistor Specification

Transistor Code		IXGH85N30C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	420A
Rise Time		70

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