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IXGH40N60 IGBT Transistor

The IXGH40N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH40N60 transistor as follows.

Circuit diagram symbol of the IXGH40N60 transistor

IXGH40N60 Transistor Specification

Transistor Code IXGH40N60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247AD
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 300
Rise Time 200

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