IXGH40N30 IGBT Transistor

The IXGH40N30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH40N30 transistor as follows.

IXGH40N30 Transistor Specification

Transistor Code		IXGH40N30
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		1.8

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