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IXGH30N30S IGBT Transistor

The IXGH30N30S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH30N30S transistor as follows.

Circuit diagram symbol of the IXGH30N30S transistor

IXGH30N30S Transistor Specification

Transistor Code IXGH30N30S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247SMD
Collector Power Dissipation (Maximum) Pc 200VW
Collector-Emitter Voltage (Maximum) VCE 300V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 2500pF
Rise Time 25

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