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IXGH28N60B3D1 IGBT Transistor

The IXGH28N60B3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH28N60B3D1 transistor as follows.

Circuit diagram symbol of the IXGH28N60B3D1 transistor

IXGH28N60B3D1 Transistor Specification

Transistor Code IXGH28N60B3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 66A
Rise Time 100

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