IXGH25N100U1 IGBT Transistor

The IXGH25N100U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH25N100U1 transistor as follows.

IXGH25N100U1 Transistor Specification

Transistor Code		IXGH25N100U1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		2750pF
Rise Time		100

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