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IXGH25N100U1 IGBT Transistor

The IXGH25N100U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH25N100U1 transistor as follows.

Circuit diagram symbol of the IXGH25N100U1 transistor

IXGH25N100U1 Transistor Specification

Transistor Code IXGH25N100U1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 1000V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.5V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 2750pF
Rise Time 100

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