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IXGH24N170 IGBT Transistor

The IXGH24N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH24N170 transistor as follows.

Circuit diagram symbol of the IXGH24N170 transistor

IXGH24N170 Transistor Specification

Transistor Code IXGH24N170
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 50A
Rise Time 250

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