IXGF32N170 IGBT Transistor

The IXGF32N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGF32N170 transistor as follows.

IXGF32N170 Transistor Specification

Transistor Code		IXGF32N170
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS_I4-PAK
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	44A
Rise Time		250

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