IXGE200N60B IGBT Transistor

The IXGE200N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGE200N60B transistor as follows.

IXGE200N60B Transistor Specification

Transistor Code		IXGE200N60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS227
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	175A
Rise Time		160

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