IXGD25N100 IGBT Transistor

The IXGD25N100 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGD25N100 transistor as follows.

IXGD25N100 Transistor Specification

Transistor Code		IXGD25N100
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO254
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		500

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