IXGD10N60 IGBT Transistor

The IXGD10N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGD10N60 transistor as follows.

IXGD10N60 Transistor Specification

Transistor Code		IXGD10N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO257
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		600

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