IXGD10N100 IGBT Transistor

The IXGD10N100 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGD10N100 transistor as follows.

IXGD10N100 Transistor Specification

Transistor Code		IXGD10N100
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO257
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		550

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