IXGA7N60BD1 IGBT Transistor

The IXGA7N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGA7N60BD1 transistor as follows.

IXGA7N60BD1 Transistor Specification

Transistor Code		IXGA7N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263(D2PAK)
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Rise Time		150

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