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IXGA20N250HV IGBT Transistor

The IXGA20N250HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGA20N250HV transistor as follows.

Circuit diagram symbol of the IXGA20N250HV transistor

IXGA20N250HV Transistor Specification

Transistor Code IXGA20N250HV
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 2500V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.1V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 53
Rise Time 160

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