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IXEN60N120 IGBT Transistor

The IXEN60N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXEN60N120 transistor as follows.

Circuit diagram symbol of the IXEN60N120 transistor

IXEN60N120 Transistor Specification

Transistor Code IXEN60N120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 100A
Rise Time 30

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