IXEH40N120 IGBT Transistor

The IXEH40N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXEH40N120 transistor as follows.

IXEH40N120 Transistor Specification

Transistor Code		IXEH40N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	60A
Rise Time		50

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