IXEH25N120 IGBT Transistor

The IXEH25N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXEH25N120 transistor as follows.

IXEH25N120 Transistor Specification

Transistor Code		IXEH25N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	36A
Rise Time		175

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