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IXDT30N120AU1 IGBT Transistor

The IXDT30N120AU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDT30N120AU1 transistor as follows.

Circuit diagram symbol of the IXDT30N120AU1 transistor

IXDT30N120AU1 Transistor Specification

Transistor Code IXDT30N120AU1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC

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