IXDT30N120 IGBT Transistor

The IXDT30N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDT30N120 transistor as follows.

IXDT30N120 Transistor Specification

Transistor Code		IXDT30N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC

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