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Home » Electronics » IGBT » IXDR30N120D1 Transistor

IXDR30N120D1 IGBT Transistor

The IXDR30N120D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDR30N120D1 transistor as follows.

Circuit diagram symbol of the IXDR30N120D1 transistor

IXDR30N120D1 Transistor Specification

Transistor Code IXDR30N120D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.9V
Collector Current (Maximum) IC 50A
Rise Time 70

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