IXDR30N120 IGBT Transistor

The IXDR30N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDR30N120 transistor as follows.

IXDR30N120 Transistor Specification

Transistor Code		IXDR30N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	50A
Rise Time		70

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