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IXDP35N60B IGBT Transistor

The IXDP35N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDP35N60B transistor as follows.

Circuit diagram symbol of the IXDP35N60B transistor

IXDP35N60B Transistor Specification

Transistor Code IXDP35N60B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 60A
Rise Time 70

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