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IXDN75N120 IGBT Transistor

The IXDN75N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDN75N120 transistor as follows.

Circuit diagram symbol of the IXDN75N120 transistor

IXDN75N120 Transistor Specification

Transistor Code IXDN75N120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 120A
Operating Junction Temperature (Maximum) 150 oC

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