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IXDN55N120D1 IGBT Transistor

The IXDN55N120D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDN55N120D1 transistor as follows.

Circuit diagram symbol of the IXDN55N120D1 transistor

IXDN55N120D1 Transistor Specification

Transistor Code IXDN55N120D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOTOP
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 85A
Operating Junction Temperature (Maximum) 150 oC

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