IXDN55N120 IGBT Transistor

The IXDN55N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDN55N120 transistor as follows.

IXDN55N120 Transistor Specification

Transistor Code		IXDN55N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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