IXDH35N60BD1 IGBT Transistor

The IXDH35N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDH35N60BD1 transistor as follows.

IXDH35N60BD1 Transistor Specification

Transistor Code		IXDH35N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	60A
Rise Time		70

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