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IXDH30N120 IGBT Transistor

The IXDH30N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDH30N120 transistor as follows.

Circuit diagram symbol of the IXDH30N120 transistor

IXDH30N120 Transistor Specification

Transistor Code IXDH30N120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC

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