IXCH36N250 IGBT Transistor

The IXCH36N250 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXCH36N250 transistor as follows.

IXCH36N250 Transistor Specification

Transistor Code		IXCH36N250
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	595W
Collector-Emitter Voltage (Maximum)	VCE	2500V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	73A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		170
Rise Time		580

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