IXBX55N300 IGBT Transistor

The IXBX55N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBX55N300 transistor as follows.

IXBX55N300 Transistor Specification

Transistor Code		IXBX55N300
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector-Emitter Voltage (Maximum)	VCE	3000V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	130A
Rise Time		268

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