IXBX50N360HV IGBT Transistor

The IXBX50N360HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBX50N360HV transistor as follows.

IXBX50N360HV Transistor Specification

Transistor Code		IXBX50N360HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247HV
Collector Power Dissipation (Maximum)	Pc	660W
Collector-Emitter Voltage (Maximum)	VCE	3600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	125A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		195
Rise Time		420

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