IXBX28N300HV IGBT Transistor

The IXBX28N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBX28N300HV transistor as follows.

IXBX28N300HV Transistor Specification

Transistor Code		IXBX28N300HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247HV
Collector Power Dissipation (Maximum)	Pc	350W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	62A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		87
Rise Time		412

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