IXBV22N300S IGBT Transistor

The IXBV22N300S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBV22N300S transistor as follows.

IXBV22N300S Transistor Specification

Transistor Code		IXBV22N300S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS220SMDHV
Collector Power Dissipation (Maximum)	Pc	290W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		85
Rise Time		360

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