IXBT42N300HV IGBT Transistor

The IXBT42N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT42N300HV transistor as follows.

IXBT42N300HV Transistor Specification

Transistor Code		IXBT42N300HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268HV
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	104A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		170
Rise Time		330

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