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IXBT22N300HV IGBT Transistor

The IXBT22N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT22N300HV transistor as follows.

Circuit diagram symbol of the IXBT22N300HV transistor

IXBT22N300HV Transistor Specification

Transistor Code IXBT22N300HV
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268HV
Collector Power Dissipation (Maximum) Pc 290W
Collector-Emitter Voltage (Maximum) VCE 3000V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 85
Rise Time 360

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